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Volumn 97, Issue 11, 2010, Pages

Structural characterization of amorphous Ta2 O5 and SiO2-Ta2 O5 used as solid electrolyte for nonvolatile switches

(12) Banno, Naoki a Sakamoto, Toshitsugu a Iguchi, Noriyuki a Matsumoto, Masashi a Imai, Hideto a Ichihashi, Toshinari a Fujieda, Shinji a Tanaka, Kazuhiko b Watanabe, Satoshi b Yamaguchi, Shu b Hasegawa, Tsuyoshi c Aono, Masakazu c

a NEC CORPORATION (Japan)

b UNIVERSITY OF TOKYO (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COORDINATION NUMBER; DIFFUSIVITIES; FILM DENSITY; LOW TEMPERATURE ANNEALING; NON-VOLATILE; OXYGEN ATOM; POLYCRYSTALLIZATION; STRUCTURAL CHARACTERIZATION; STRUCTURAL DIFFERENCES; THERMAL STABILITY;

OXYGEN; SILICON COMPOUNDS; SOLID ELECTROLYTES;

TANTALUM;

EID: 77956853768 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488830 Document Type: Article

Times cited : (16)

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