Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Li, Yali ^a   Li, Chunyang ^b   He, Deyan ^c   Li, Junshuai ^c  

^a SUMITOMO CHEMICAL CO LTD   (Japan)

^b ZHOUKOU NORMAL UNIVERSITY   (China)

^c LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PLASMAS; ELECTRICAL CHARACTERISTIC; HALL MEASUREMENTS; INDIUM TIN OXIDE FILMS; ITO FILMS; LOW RESISTIVITY; ROOM TEMPERATURE; SEMICONDUCTOR METALS; SPIN-COATING METHOD; VISIBLE LIGHT;

CARRIER CONCENTRATION; FILM PREPARATION; PHOTOLITHOGRAPHY; PLASMAS; SEMICONDUCTING INDIUM; TIN;

OXIDE FILMS;

EID: 70249097030     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/105303     Document Type: Article

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