Cubic-structured HfLaO for the blocking layer of a charge-trap type flash memory device

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Park, Jong Kyung ^a   Park, Youngmin ^a   Song, Myeong Ho ^b   Lim, Sung Kyu ^b   Oh, Jae Sub ^b   Joo, Moon Sig ^c   Hong, Kwon ^c   Cho, Byung Jin ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CHARGE RETENTION; CHARGE TRAP; CONDUCTION BAND OFFSET; FLASH MEMORY DEVICES; HIGH VOLTAGE; MEMORY DEVICE; MEMORY WINDOW;

ELECTRON MOBILITY; HETEROJUNCTIONS;

FLASH MEMORY;

EID: 77956740748     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.091501     Document Type: Article

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