CuPd interface charge and energy quantum entrapment: A tight-binding and XPS investigation

Applied Surface Science

Volumn 257, Issue 3, 2010, Pages 727-730

  Nie, Yanguang ^a   Wang, Yan ^a   Sun, Yi ^b   Pan, Ji Sheng ^b   Mehta, B R ^c   Khanuja, Manika ^c   Shivaprasad, S M ^d   Sun, Chang Q ^a,e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^d JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^e XIANGTAN UNIVERSITY   (China)

Author keywords

Electronic band structure; EXAFS; Heterojunctions; Nanofabrications; NEXAFS; Photoelectron spectroscopies; SEXAFS

Indexed keywords

BINARY ALLOYS; BINDING ENERGY; COPPER; HETEROJUNCTIONS; INTERFACES (MATERIALS); NANOTECHNOLOGY; PALLADIUM; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND-NATURE ALTERATION; ELECTRONIC BAND STRUCTURE; EXAFS; HETEROJUNCTION INTERFACES; INTERFACIAL POTENTIAL; NEXAFS; PHYSICAL AND CHEMICAL PROPERTIES; SEXAFS;

COPPER ALLOYS;

EID: 77956610739     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.049     Document Type: Article

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