Low-temperature recrystallization of Ge nanolayers on ZnSe

Semiconductors

Volumn 41, Issue 5, 2007, Pages 590-595

  Suprun, S P ^a   Fedosenko, E V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34248369394     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378260705020X     Document Type: Article

References (22)

1. D. Schmeißer, O. Böhme, A. Yfantis, et al., Phys. Rev. Lett. 83, 380 (1999).
2. L. K. Pan, C. Q. Sun, B. K. Tay, et al., J. Phys. Chem. B 106, 11725 (2002).
3. A. Howard, D. N. S. Clark, C. E. J. Mitchell, et al., Surf. Sci. 518, 210 (2002).
4. J. Nanda, B. A. Kuruvilla, and D. D. Sarma, Phys. Rev. B 59, 7473 (1999).
5. Taizo Ohgi and Daisuke Fujita, Phys. Rev. B 66, 115410 (2002).
6. G. A. Breaux, R. C. Benirschke, T. Sugai, et al., Phys. Rev. Lett. 91, 215508 (2003).
7. A. A. Shvartsburg and M. F. Jarrold, Phys. Rev. Lett. 85, 2530 (2000).
8. S. Chacko, K. Joshi, and D. G. Kanhere, Phys. Rev. Lett. 92, 135506 (2004).
9. Z. Zhang, M. Zhao, and Q. Jiang, Semicond. Sci. Technol. 16, L33 (2001).
10. C. Q. Sun, C. M. Li, H. L. Bai, and E. Y. Jiang, Nanotechnology 16, 1290 (2005).
11. C. Q. Sun, Phys. Rev. B 69, 045105 (2004).
12. I. G. Neizvestnyǐ, S. P. Suprun, A. B. Talochkin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1135 (2001)
13. [Semiconductors 35, 1088 (2001)].
14. I. G. Neizvestny, S. P. Suprun, V. N. Shumsky, et al., Nanotechnology 12, 437 (2001).
15. A. B. Talochkin, S. P. Suprun, A. V. Efanov, et al., Pis'ma Zh. Éksp. Teor. Fiz. 73, 337 (2001)
16. [JETP Lett. 73, 297 (2001)].
17. A. B. Talochkin, S. A. Teys, and S. P. Suprun, Phys. Rev. B 72, 115416 (2005).
18. I. G. Neizvestnyǐ, S. P. Suprun, and V. N. Shumskiǐ, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 100 (2005)
19. [Semiconductors 39, 89 (2005)].
20. C. Q. Sun, T. P. Chen, B. K. Tay, et al., J. Phys. D: Appl. Phys. 34, 3470 (2001).
21. C. Q. Sun, J. Phys.: Condens. Matter 11, 4801 (1999).
22. A. N. Goldstein, Appl. Phys. A 62, 33 (1996).