Crosstalk analysis in Carbon Nanotube interconnects and its impact on gate oxide reliability

Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010

Volumn , Issue , 2010, Pages 272-279

  Das, Debaprasad ^a   Rahaman, Hafizur ^a  

^a INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

Author keywords

Average failure rate (AFR); Carbon Nanotube (CNT); Crosstalk; Gate oxide reliability; Single wall CNT (SWCNT)

Indexed keywords

CARBON NANOTUBE INTERCONNECTS; CIRCUIT PARAMETER; CROSSTALK ANALYSIS; CROSSTALK EFFECT; CU-INTERCONNECTS; FAILURE RATE; FAILURE-IN-TIME; GATE OXIDE RELIABILITY; SIMILAR ANALYSIS; SINGLE-WALL; WORK ANALYSIS;

CARBON NANOTUBES; CROSSTALK; ELECTRIC NETWORK ANALYSIS; QUALITY ASSURANCE; RELIABILITY ANALYSIS; SINGLE-WALLED CARBON NANOTUBES (SWCN); VLSI CIRCUITS;

GATES (TRANSISTOR);

EID: 77956546373     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASQED.2010.5548255     Document Type: Conference Paper

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