Room temperature ferromagnetism in Ni-doped HfO2 thin films

Journal of Physics D: Applied Physics

Volumn 43, Issue 30, 2010, Pages

  Sharma, M K ^a   Kanjilal, Aloke ^b   Voelskow, Matthias ^b   Kanjilal, D ^c   Chatterjee, Ratnamala ^a,c  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; HOMOGENEOUS DISPERSIONS; LATTICE DEFECTS; MATRIX; NI IONS; NI-DOPED; NI-DOPING; ROOM TEMPERATURE FERROMAGNETISM; RUTHERFORD BACK-SCATTERING; SHI IRRADIATION; STRUCTURAL AND MAGNETIC PROPERTIES; SWIFT HEAVY IONS; TEMPERATURE DATA;

CHEMICAL ACTIVATION; DISPERSIONS; FERROMAGNETISM; HAFNIUM; HAFNIUM OXIDES; IONS; IRRADIATION; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; OXYGEN; OXYGEN VACANCIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; VAPOR DEPOSITION;

DOPING (ADDITIVES);

EID: 77956461151     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/30/305003     Document Type: Article

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