Growth control of stoichiometry in LaMnO3 epitaxial thin films by pulsed laser deposition

Journal of Crystal Growth

Volumn 312, Issue 20, 2010, Pages 2923-2927

  Marton, Zsolt ^a,b   A Seo, Sung Seok ^a   Egami, Takeshi ^a,c   Lee, Ho Nyung ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

Author keywords

A3. Laser epitaxy; B1. Oxides; B1. Perovskites; B2. Magnetic materials

Indexed keywords

ANTIFERROMAGNETS; B1. OXIDES; B1. PEROVSKITES; B2. MAGNETIC MATERIALS; BULK-LIKE; CATION RATIO; CATION STOICHIOMETRY; COMPLEX OXIDES; EPITAXIAL THIN FILMS; FERROMAGNETIC INSULATOR; GROWTH CONDITIONS; GROWTH CONTROL; GROWTH PARAMETERS; LA-DEFICIENCY; LASER EPITAXY; LASER PROCESS; MAGNETIC PHASIS; OPTICAL TRANSPORT PROPERTIES; OXYGEN CONTENT; OXYGEN STOICHIOMETRY; REDUCING ATMOSPHERE; SRTIO;

DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MAGNETIC DEVICES; MAGNETIC MATERIALS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; POSITIVE IONS; PULSED LASER DEPOSITION; PULSED LASERS; STOICHIOMETRY; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

EPITAXIAL FILMS;

EID: 77956404990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.013     Document Type: Article

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