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1
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2
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0000745672
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Y. Okimoto, T. Katsufuji, T. Ishikawa, T. Arima and Y. Tokura: Phys. Rev. B 55 (1997) 4206.
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Okimoto, Y.1
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3
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0001501078
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K. H. Kim, J. Y. Gu, H. S. Choi, D. J. Eom, J. H. Jung and T. W. Noh: Phys. Rev. B 55 (1997) 4023.
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Noh, T.W.6
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4
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0000220169
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J. H. Jung, K. H. Kim, D. J. Eom, T. W. Noh, E. J. Choi, J. Yu, Y. S. Kwon and Y. Chung: Phys. Rev. B 55 (1997) 15489.
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Yu, J.6
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9
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0642272678
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Y. Moritomo, A. Machida, K. Matsuda, M. Ichida and A. Nakamura: Phys. Rev. B 56 (1997) 5088.
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Moritomo, Y.1
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Nakamura, A.5
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10
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4244101029
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A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido and Y. Tokura: Phys. Rev. B 51 (1995) 14103.
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14
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5844300652
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refs. 5, 12
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For the various 3d-transitional metal oxides, ∈∞ is estimated to be 2-10; See refs. 5, 12, and T. Kalsufuji, M. Kasai and Y. Tokura: Phys. Rev. Lett. 76 (1996) 126. We confirmed that the variation of ∈∞ from 1 to 10 yields negligibly small differences in reflectivity below 0.01 eV.
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Kalsufuji, T.1
Kasai, M.2
Tokura, Y.3
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15
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85034125885
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note
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The Hagen-Rubens formula corresponds to a Drude formula in the limit ℏ/τ → ∞ and hence it is applicable only in the region ω ≪ ℏ/τ.
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16
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85034129304
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note
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7, 8)
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19
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0030565381
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S. G. Kaplan, M. Qaijada, H. D. Drew, D. B. Tanner, G. C. Xiong, R. Ramesh, C. Kwon and T. Venkatesan: Phys. Rev. Lett. 77 (1996) 2081.
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Kaplan, S.G.1
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Xiong, G.C.5
Ramesh, R.6
Kwon, C.7
Venkatesan, T.8
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20
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0342557121
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A. Lanzara, N. L. Saini, M. Brunelli, F. Natali, A. Bianconi, P. G. Radaelli and S.-W. Cheong: Phys. Rev. Lett. 81 (1998) 878.
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Lanzara, A.1
Saini, N.L.2
Brunelli, M.3
Natali, F.4
Bianconi, A.5
Radaelli, P.G.6
Cheong, S.-W.7
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23
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85034129234
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note
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We estimated skin depth as the inverse of the absorption coefficient α(ω) = 2ωk(ω)/c and confirmed that the skin-depth becomes longer below 0.1 eV for x = 0.30.
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24
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0000857067
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For the bilayer manganite, a Drude component was not observed in the optical spectra measured even on the cleaved surfaces [T. Ishikawa, K. Kimura, T. Katsufuji and Y. Tokura: Phys. Rev. B 57 (1998) R8079]. However, this is probably due to the localization of the carriers, suggested by the logarithmic upturn in dc resistivity at low temperatures.
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Phys. Rev. B
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Ishikawa, T.1
Kimura, K.2
Katsufuji, T.3
Tokura, Y.4
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