GaN-on-diamond field-effect transistors: From wafers to amplifier modules

MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings

Volumn , Issue , 2010, Pages 60-66

  Babic D I ^a   Diduck, Q ^a   Yenigalla, P ^a   Schreiber, A ^a   Francis, D ^a   Faili, F ^a   Ejeckam, F ^a   Felbinger, J G ^b   Eastman, L F ^b  

^a Group4 Labs Inc   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIER MODULES; DIAMOND DEVICES; LIQUID CRYSTAL THERMOGRAPHY; THERMAL RESISTANCE MEASUREMENT;

DIAMONDS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INFORMATION TECHNOLOGY; MICROELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 77956374075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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