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Materials Science and Engineering: B

Volumn 173, Issue 1-3, 2010, Pages 229-233

Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

(5) Tohei, Tetsuya a Mizoguchi, Teruyasu a Hiramatsu, Hidenori b Hosono, Hideo b,c Ikuhara, Yuichi a,d

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

d JAPAN FINE CERAMICS CENTER (Japan)

Author keywords

First principles calculation; HAADF STEM; Heterointerface; LaCuOSe compound; Reactive solid phase epitaxy

Indexed keywords

CALCULATIONS; COPPER COMPOUNDS; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); LANTHANUM; MAGNESIA; SELENIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL THIN FILMS; FIRST PRINCIPLE CALCULATIONS; GROWTH MECHANISMS; HETERO-INTERFACES; HIGH-ANGLE-ANNULAR-DARK-FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPES; LACUOSE COMPOUND; MGO SUBSTRATE; REACTIVE SOLID-PHASE EPITAXY; SOLID PHASE EPITAXY; THINFILM SUBSTRATES;

LANTHANUM COMPOUNDS;

EID: 77956264626 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2009.12.024 Document Type: Conference Paper

Times cited : (4)

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