Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors

Thin Solid Films

Volumn 518, Issue 23, 2010, Pages 7024-7028

  Rasul, Amjad ^a,b   Zhang, Jie ^c   Gamota, Dan ^c   Singh, Manish ^b   Takoudis, Christos ^b  

^a MOTOROLA INC   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c Printovate Inc   (United States)

Author keywords

Electrical properties and measurements; Gate insulator; Nanocomposite; Organic field effect transistors; Printed electronics

Indexed keywords

ACTIVE LAYER; ARYL AMINES; BARIUM TITANATE NANOPARTICLES; BOTTOM GATE; ELECTRICAL PROPERTIES AND MEASUREMENTS; EPOXY SOLUTIONS; FILLER PARTICLES; GATE INSULATOR; HIGH FIELD; LOW OPERATING VOLTAGE; LOW THRESHOLD VOLTAGE; MATERIAL DEPOSITION; METAL COATED PLASTIC; ORGANIC DEVICES; ORGANIC SEMICONDUCTOR; P-TYPE; POLYMER NANOCOMPOSITE; PRINTED ELECTRONICS; PRINTING TECHNOLOGIES; PROCESSABLE; PROPYLENE GLYCOL METHYL ETHER; RELATIVE PERMITTIVITY; SOLUTION-PROCESSED;

BARIUM; BARIUM TITANATE; CAPACITANCE; DIELECTRIC MATERIALS; ETHERS; FIELD EFFECT TRANSISTORS; GLYCOLS; NANOCOMPOSITES; ORGANIC LIGHT EMITTING DIODES (OLED); PLASTIC COATINGS; PROPYLENE; PROTECTIVE COATINGS; SEMICONDUCTING ORGANIC COMPOUNDS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77956230059     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.06.058     Document Type: Article

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