Structural properties of GaN grown on LiGaO2 by PLD

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 36-39

  Takahashi, H ^a   Fujioka, H ^a,b   Ohta, J ^a   Oshima, M ^a   Kimura, M ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

A1. Stresses; A1. X ray diffraction; A3. Laser epitaxy; B1. Nitrides

Indexed keywords

ANISOTROPY; COOLING; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

THERMAL CONTRACTION;

FILM GROWTH;

EID: 0141895096     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01579-3     Document Type: Article

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