Reduction of off-state currents in silicon on glass thin film transistor by off-state bias stress

Electrochemical and Solid-State Letters

Volumn 13, Issue 7, 2010, Pages

  Choi, Jae Won ^a   Cheon, Jun Hyuk ^a   Oh, Jae Hwan ^a   Jang, Jin ^a   Kim, Sung Chul ^b   Ahn, Ji Su ^b   Williams, C A Kosik ^c   Couillard, J G ^c  

^a Kyung Hee University   (South Korea)

^b Samsung Mobile Display Co   (South Korea)

^c Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; FIELD-EFFECT MOBILITIES; GATE OXIDE; GATE VOLTAGES; OFF-STATE CURRENT; OFF-STATE LEAKAGE CURRENT; SILICON ON GLASS; SINGLE CRYSTALLINE SILICON; STATE PERFORMANCE; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS;

DRAIN CURRENT; GLASS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 77956222991     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3416325     Document Type: Article

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