Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 574-576

  Shi, Xuejie ^a   Henttinen, K ^b   Suni, T ^b   Suni, I ^b   Lau, S S ^c   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Glass; Ion cutting; Layer transfer; Thin film transistor

Indexed keywords

CHARACTERIZATION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

ELECTRON FIELD EFFECT MOBILITY; ION CUTTING TECHNIQUE; SINGLE CRYSTALLINE SILICON THIN FILM TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 0141786931     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815945     Document Type: Letter

References (7)

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