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Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2705-2709

Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

(4) Wang, D a Svensson, S P b Shterengas, L a Belenky, G a

a Stony Brook University (United States)

b U S ARMY RESEARCH LABORATORY (United States)

Author keywords

A1. Absorption; A1. Carrier lifetime; A1. Photoluminescence; A1. Ultra fast; B1. Dilute nitride; B1. InAsN

Indexed keywords

A1. ABSORPTION; A1. CARRIER LIFETIME; A1. PHOTOLUMINESCENCE; B1. INASN; DILUTE-NITRIDE; ULTRA-FAST;

ABSORPTION; EPITAXIAL GROWTH; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM;

CARRIER LIFETIME;

EID: 77956185654 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.06.007 Document Type: Article

Times cited : (7)

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