Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 5, 2005, Pages 1063-1068

  Shterengas, L ^a   Belenky, G L ^a   Yeh, Jeng Ya ^a   Mawst, L J ^a   Tansu, N ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

Carrier concentration; Current concentration; Differential gain; Dilute nitride GaAs; Diode lasers; GaAs based lasers; Gain guided waveguide lasers; InGaAs quantum wells; Linewidth enhancement factor; Quantum well nitride content; Ridge waveguide lasers

Indexed keywords

CARRIER CONCENTRATION; DIODES; NITRIDES; SEMICONDUCTOR LASERS; WAVEGUIDE COMPONENTS;

CURRENT CONCENTRATION; DIFFERENTIAL GAIN; DILUTE NITRIDE GAAS; GAAS-BASED LASERS; INGAAS QUANTUM WELLS; LINEWIDTH ENHANCEMENT FACTOR; QUANTUM-WELL NITRIDE CONTENT; RIDGE WAVEGUIDE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31644451883     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853736     Document Type: Article

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