Theoretical study on thermoelectric properties of Ge nanowires based on electronic band structures

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1026-1028

  Huang, Wen ^a   Koong, Chee Shin ^a   Liang, Gengchiau ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Nanotechnology; semiconductor materials; thermoelectric devices; thermoelectricity

Indexed keywords

CROSS-SECTIONAL SHAPE; DIFFERENT SIZES; ELECTRICAL CONDUCTANCE; ELECTRON TRANSPORT; ELECTRONIC BAND STRUCTURE; P-TYPE; POWER FACTORS; QUANTUM CONFINEMENT EFFECTS; SUB-BANDS; THEORETICAL STUDY; THERMOELECTRIC DEVICES; THERMOELECTRIC PROPERTIES;

BAND STRUCTURE; ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; ELECTRIC WIRE; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

GERMANIUM;

EID: 77956175695     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2053190     Document Type: Article

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