Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Liang, Gengchiau ^a,b   Huang, Wen ^a   Koong, Chee Shin ^a   Wang, Jian Sheng ^a,b   Lan, Jinghua ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

[100] ORIENTATION; BALLISTIC TRANSPORTS; CROSS-SECTION AREA; ELECTRONIC BAND STRUCTURE; FIGURE OF MERIT; GEOMETRY EFFECTS; LARGE SIZES; MATERIAL PROPERTY; N-DOPED; P-TYPE; POWER FACTORS; SIDE LENGTH; SILICON NANOWIRES; SINGLE NANOWIRES; THERMAL CONDUCTANCE; THERMOELECTRIC PROPERTIES; TIGHT BINDING MODEL; TRANSMISSION MODE;

BALLISTICS; ELECTRIC POWER FACTOR; PHOSPHORUS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

NANOWIRES;

EID: 75649120048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273485     Document Type: Article

References (27)

1. G. J. Snyder and E. Toberer, Nature Mater. 1476-1122 7, 105 (2008). 10.1038/nmat2090 (Pubitemid 351187650)
2. H. J. Goldsmid, Thermoelectric Refrigeration (Plenum, New York, 1964).
3. G. Chen, M. S. Dresselhaus, G. Dresselhaus, J. P. Fleurial, and T. Caillat, Int. Mater. Rev. 0950-6608 48, 45 (2003). 10.1179/095066003225010182
4. C. Uher, in Semiconductors and Semimetals Series, edited by, T. M. Tritt, (Academic, New York, 2001), Vol. 69, pp. 139-253.
5. G. S. Nolas, J. Poon, and M. Kanatzidis, MRS Bull. 31, 199 (2006).
6. S. M. Kauzlarich, S. R. Brown, and G. J. Snyder, Dalton Trans. 1477-9226 21, 2099, (2007). 10.1039/b702266b (Pubitemid 46791126)
7. G. A. Slack, in CRC Handbook of Thermoelectrics, edited by, D. M. Rowe, (CRC, Boca Raton, 1995), pp. 407-440.
8. L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 0163-1829 47, 12727 (1993). 10.1103/PhysRevB.47.12727
9. M. S. Dresselhaus, G. Chen, M. Y. Tang, R. G. Yang, H. Y. Lee, D. Z. Wang, Z. F. Ren, J. P. Fleurial, and P. Gogna, Adv. Mater. 0935-9648 19, 1043 (2007). 10.1002/adma.200600527 (Pubitemid 46942265)
10. T. T. M. Vo, A. J. Williamson, and V. Lordi, Nano Lett. 1530-6984 8, 1111 (2008). 10.1021/nl073231d
11. X. X. Ni, G. C. Liang, J. -S. Wang, and B. W. Li, Appl. Phys. Lett. 0003-6951 95, 192114 (2009). 10.1063/1.3264087
12. T. Koga, S. B. Cronin, M. S. Dresselhaus, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. 0003-6951 77, 1490 (2000). 10.1063/1.1308271
13. Y. Cui, Q. Q. Wei, H. K. Park, and C. M. Lieber, Science 0036-8075 293, 1289 (2001). 10.1126/science.1062711 (Pubitemid 32777412)
14. B. Z. Tian, X. L. Zheng, T. J. Kempa, Y. Fang, N. F. Yu, G. H. Yu, J. L. Huang, and C. M. Lieber, Nature (London) 0028-0836 449, 885 (2007). 10.1038/nature06181 (Pubitemid 47598610)
15. Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 1530-6984 3, 149 (2003). 10.1021/nl025875l (Pubitemid 37130527)
16. N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 27, 383 (2006). 10.1109/LED.2006.873381
17. A. I. Boukai, Y. Bunimovich, J. T. Kheli, J. K. Yu, W. A. Goddard, and J. R. Heath, Nature (London) 0028-0836 451, 168 (2008). 10.1038/nature06458
18. A. I. Hochbaum, R. K. Chen, R. D. Delgado, W. J. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. D. Yang, Nature (London) 0028-0836 451, 163 (2008). 10.1038/nature06381
19. R. Chen, A. I. Hochbaum, P. Murphy, J. Moore, P. D. Yang, and A. Majumdar, Phys. Rev. Lett. 0031-9007 101, 105501 (2008). 10.1103/PhysRevLett. 101.105501
20. T. Vo, A. J. Williamson, and G. Galli, Phys. Rev. B 0163-1829 74, 045116 (2006). 10.1103/PhysRevB.74.045116 (Pubitemid 44087233)
21. X. Zhao, C. M. Wei, L. Yang, and M. Y. Chou, Phys. Rev. Lett. 0031-9007 92, 236805 (2004). 10.1103/PhysRevLett.92.236805
22. T. Markussen, A. Jauho, and M. Brandbyge, Phys. Rev. B 0163-1829 79, 035415 (2009). 10.1103/PhysRevB.79.035415
23. T. B. Boykin, G. Klimeck, and F. Oyafuso, Phys. Rev. B 0163-1829 69, 115201 (2004). 10.1103/PhysRevB.69.115201
24. S. Lee, F. Oyafuso, P. Allmen, and G. Klimeck, Phys. Rev. B 0163-1829 69, 045316 (2004). 10.1103/PhysRevB.69.045316
25. A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 0018-9383 50, 1853 (2003). 10.1109/TED.2003.815366
26. T. Markussen, A. P. Jauho, and M. Brandbyge, Nano Lett. 1530-6984 8, 3771 (2008). 10.1021/nl8020889
27. R. Kim, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 0021-8979 105, 034506 (2009). 10.1063/1.3074347