Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 291-294

  Sugai, H ^a   Matsunami, N ^b   Fukuoka, O ^b   Sataka, M ^a   Kato, T ^a   Okayasu, S ^a   Shimura, T ^b   Tazawa, M ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Al doped ZnO films; Conductivity; Electronic excitation; High energy heavy ion

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC EXCITATION; ELECTRIC PROPERTIES; HEAVY IONS; ION BOMBARDMENT; IRRADIATION; SPUTTER DEPOSITION; ZINC OXIDE;

AL-DOPED ZNO FILMS; ELECTRONIC EXCITATION; ELECTRONIC STOPPING POWER; HIGH-ENERGY-HEAVY IONS;

SEMICONDUCTING FILMS;

EID: 33746298060     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.126     Document Type: Article

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