Enhanced performance of fullerene n-channel field-effect transistors with titanium sub-oxide injection layer

Advanced Functional Materials

Volumn 19, Issue 9, 2009, Pages 1459-1464

  Cho, Shinuk ^a   Seo, Jung Hwa ^a   Lee, Kwanghee ^b   Heeger, Alan J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACIDS; DIRECT MEASUREMENT; ELECTRON INJECTION LAYERS; ELECTRON-INJECTION BARRIER; ENHANCED PERFORMANCE; INJECTION LAYERS; INTERFACIAL DIPOLES; METHYL ESTERS; N-CHANNEL; ORGANIC FIELD-EFFECT TRANSISTORS; PASSIVATION LAYER; SOURCE/DRAIN ELECTRODES; TIO;

CALCIUM; CONTACT RESISTANCE; ELECTRODES; ELECTRON INJECTION; ELECTRON MOBILITY; ELECTRONS; ESTERIFICATION; ESTERS; FATTY ACIDS; FULLERENES; MESFET DEVICES; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; POWER SUPPLY CIRCUITS; TITANIUM; TITANIUM OXIDES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 66149095825     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200900189     Document Type: Article

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