Device performance correlated with structural properties of vertically aligned nanorod arrays in polymer/ZnO solar cells

Journal of Physical Chemistry C

Volumn 114, Issue 32, 2010, Pages 13846-13852

  Bi, Dongqin ^a,b   Wu, Fan ^a,b   Yue, Wenjin ^a,b   Guo, Ying ^a,b   Shen, Wei ^a,b   Peng, Ruixiang ^a,b   Wu, Huan ^a,b   Wang, Xiangke ^a,b   Wang, Mingtai ^a,b,c  

^a INSTITUTE OF PLASMA PHYSICS   (China)

^b ANHUI JIANZHU UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE RECOMBINATION KINETICS; CURRENT-VOLTAGE CHARACTERIZATION; DEEP-LEVEL DEFECTS; DEFECT CONCENTRATIONS; DEPOSITION TIME; DEVICE PERFORMANCE; ELECTRON LIFETIME; EXPONENTIAL ATTENUATION; HIGH QUALITY; INCIDENT LIGHT INTENSITY; INTENSITY-MODULATED PHOTOVOLTAGE SPECTROSCOPIES; MEH-PPV; METHOXY; NANOARRAYS; NANOROD ARRAYS; NANOROD DEVICES; OPEN CIRCUITS; P-PHENYLENEVINYLENE; PHOTOVOLTAIC DEVICES; POLYMER-BASED SOLAR CELLS; POWER CONVERSION EFFICIENCIES; RECOMBINATION RATE; VERTICALLY ALIGNED; ZNO NANOROD; ZNO NANOROD ARRAYS;

CONCENTRATION (PROCESS); CONVERSION EFFICIENCY; DEFECTS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; ZINC OXIDE;

NANORODS;

EID: 77956168355     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp103587y     Document Type: Article

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