Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity

IEEE Journal of Quantum Electronics

Volumn 46, Issue 11, 2010, Pages 1582-1589

  Jin, Chao Yuan ^a   Kojima, Osamu ^a   Inoue, Tomoya ^a   Kita, Takashi ^a   Wada, Osamu ^a   Hopkinson, Mark ^b   Akahane, Kouichi ^c  

^a KOBE UNIVERSITY   (Japan)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

All optical switch; quantum dots (QDs); ultrafast photonics; vertical cavity

Indexed keywords

ALL OPTICAL SWITCH; ALL-OPTICAL SWITCHING; BACK MIRRORS; CARRIER DYNAMICS; DETAILED DESIGN; INAS/GAAS QUANTUM DOTS; INTER-SUBBAND; LOW POWER; NON-LINEARITY; NOVEL DEVICES; POLARIZATION-INSENSITIVE; QUANTUM DOTS; SELF-ASSEMBLED; SIGNAL PROCESSING SYSTEMS; SWITCHING DEVICES; TIME CONSTANTS; ULTRA-FAST PHOTONICS; ULTRA-LOW POWER CONSUMPTION; VERTICAL CAVITY; WAVELENGTH TUNABILITY;

GALLIUM; MIRRORS; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SIGNAL PROCESSING;

OPTICAL SWITCHES;

EID: 77956131488     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2053916     Document Type: Article

References (26)

1. O. Wada, "Femtosecond all-optical devices for ultrafast communication and signal processing," New J. Phys., vol. 6, no. 1, p. 183, Nov. 2004.
2. P.W. Smith, "Application of all-optical switching and logic," Phil. Trans. R. Soc. Lond. A, vol. 313, no. 1525, pp. 349-355, Dec. 1984.
3. O. Wada, "Femtosecond semiconductor-based optoelectronic devices for optical-communication systems," Opt. Quantum Electron., vol. 32, nos. 4-5, pp. 453-471, May 2000.
4. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, no. 11, pp. 939-941, 1982.
5. E. U. Rafailov, M. A. Cataluna, and W. Sibbett, "Mode-locked quantumdot lasers," Nature Photon., vol. 1, no. 7, pp. 395-401, 2007.
6. X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, "Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers," Appl. Phys. Lett., vol. 78, no. 19, pp. 2825-2827, 2001. (Pubitemid 33599189)
7. T. Akiyama, O. Wada, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, and H. Ishikawa, "Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers," Appl. Phys. Lett., vol. 77, no. 12, pp. 1753-1755, 2000.
8. P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, "Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection," Appl. Phys. Lett., vol. 76, no. 11, pp. 1380-1382, 2000.
9. E. U. Rafailov, S. J. White, A. A. Lagatsky, A. Miller, W. Sibbett, D. A. Livshits, A. E. Zhukov, and V. M. Ustinov, "Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers," IEEE Photon. Technol. Lett., vol. 16, no. 11, pp. 2439-2441, Nov. 2004.
10. T. Akiyama, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, O. Wada, H. Ishikawa, "Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices," IEEE J. Quantum Electron., vol. 37, no. 8, pp. 1059-1065, Aug. 2001.
11. R. Prasanth, J. E. M. Haverkort, A. Deepthy, E. W. Bogaart, J. J. G. M. van der Tol, E. A. Patent, G. Zhao, Q. Gong, P. J. van Veldhoven, R. Nötzel, and J. H. Wolter, "All-optical switching due to state filling in quantum dots," Appl. Phys. Lett., vol. 84, no. 20, pp. 4059-4061, May 2004.
12. H. Nakamura, Y. Sugimoto, K. Kanamoto, N. Ikeda, Y. Tanaka, Y. Nakamura, S. Ohkouchi, Y. Watanabe, K. Inoue, H. Ishikawa, and K. Asakawa, "Ultrafast photonic crystal/quantum dot all optical switch for future photonic networks," Opt. Exp., vol. 12, no. 26, pp. 6606-6614, Dec. 2004.
13. T. Kitada, T. Kanbara, K. Morita, and T. Isu, "A GaAs/AlAs multilayer cavity with self-assembled InAs quantum dots embedded in strainrelaxed barriers for ultrafast all-optical switching applications," Appl. Phys. Exp., vol. 1, no. 9, pp. 092302-1-092302-3, 2008.
14. K. Morita, T. Takahashi, T. Kitada, and T. Isu, "Enhanced optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers," Appl. Phys. Exp., vol. 2, no. 8, pp. 082001-1-082001-3, 2009.
15. C. Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, "Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity," Appl. Phys. Lett., vol. 95, no. 2, pp. 021109-1-021109- 3, Jul. 2009.
16. R. Takahashi, Y. Kawamura, and H. Iwamura, "Ultrafast 1.55 μm alloptical switching using low-temperature-grown multiple quantum wells," Appl. Phys. Lett., vol. 68, no. 2, pp. 153-155, Jan. 1996.
17. H. S. Loka and P. W. E. Smith, "Ultrafast all-optical switching with an asymmetric Fabry-Pérot devices using low-temperature-grown GaAs: Material and device issues," IEEE J. Quantum Electron., vol. 36, no. 1, pp. 100-111, Jan. 2000.
18. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, "Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low substrate temperatures," Appl. Phys. Lett., vol. 59, no. 25, pp. 3276-3278, Dec. 1991.
19. M. Born and E. Wolf, Principles of Optics, 6th ed. New York: Plenum, 1980.
20. H. A. Macleod, Thin-Film Optical Filter. New York: Macmillan, 1986.
21. E. Garmire, "Criteria for optical bistability in a lossy saturating Fabry- Pérot," IEEE J. Quantum Electron., vol. 25, no. 3, pp. 289-295, Mar. 1989.
22. D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, "Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm," Appl. Phys. Lett., vol. 89, no. 17, pp. 171111-1-171111-3, Oct. 2006.
23. C. Y. Jin, H. Y. Liu, K. M. Groom, Q. Jiang, M. Hopkinson, T. J. Badcock, R. J. Royce, and D. J. Mowbray, "Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers," Phys. Rev. B, vol. 76, no. 8, pp. 085315- 085326, 2007.
24. C. Y. Jin, T. J. Badcock, H. Y. Liu, K. M. Groom, R. J. Royce, D. J. Mowbray, and M. Hopkinson, "Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser," IEEE J. Quantum Electron., vol. 42, no. 12, pp. 1259-1265, Dec. 2006.
25. H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray, and M. S. Skolnick, "Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures," J. Appl. Phys., vol. 96, no. 4, pp. 1988-1992, Aug. 2004.
26. C. Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, "Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector," Appl. Phys. Lett., vol. 96, no. 15, pp. 151104-1-151104-3, 2010.