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Volumn 1, Issue 9, 2008, Pages 0923021-0923023

A GaAs/AlAs multilayer cavity with self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast all-optfcal switching application

(4) Kitada, Takahiro a Kanbara, Toshiyuki a Morita, Ken a Isu, Toshiro a

a UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; MULTILAYERS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; TRANSFER MATRIX METHOD;

CAVITY LAYERS; CAVITY MODES; CAVITY STRUCTURES; INAS QUANTUM DOTS; MULTILAYER STRUCTURES; NONLINEAR REFRACTIVE INDICES; OPTICAL FIELDS; OPTICAL KERR GATES; OPTICAL-; SIGNAL INTENSITIES; SWITCHING APPLICATIONS; SWITCHING ENERGIES; TRANSFER MATRIXES; ULTRA FASTS;

OPTICAL MULTILAYERS;

EID: 57649090878 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.092302 Document Type: Article

Times cited : (18)

References (10)

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