Ultrafast all-optical switching with an asymmetric Fabry-Perot device using low-temperature-grown GaAs: Material and device issues

IEEE Journal of Quantum Electronics

Volumn 36, Issue 1, 2000, Pages 100-111

  Loka, Hany S ^a   Smith, Peter W E ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b CAIRO UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ETALONS; FABRY-PEROT INTERFEROMETERS; LIGHT REFLECTION; MIRRORS; NONLINEAR OPTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

ASYMMETRIC FABRY-PEROT DEVICES; CONTRAST RATIO;

OPTICAL SWITCHES;

EID: 0033874260     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.817645     Document Type: Article

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