Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and μ-Czochralski process

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 2, 2008, Pages 1880-1883

  Tao, Chen ^a   Ishihara, Ryoichi ^a   Metselaar, Wim ^a   Beenakker, Kees ^a   Wu, Meng Yue ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Czochralski method; Laser crystallization; Location control; Orientation control; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; NANOCRYSTALLINE ALLOYS; SILICON; SINGLE CRYSTALS; THIN FILM TRANSISTORS;

CRYSTALIZATION; CRYSTALLOGRAPHIC ORIENTATION CONTROLS; CZOCHRALSKI PROCESSES; ELECTRON BACK SCATTERING DIFFRACTIONS; GRAIN FILTERS; LASER CRYSTALLIZATION; LATERAL CRYSTALLIZATIONS; LOCATION CONTROL; LOCATION CONTROLS; NEW TECHNIQUES; ORIENTATION CONTROL; ORIENTATION CONTROLS; RANDOM GRAIN BOUNDARIES; SURFACE CRYSTALS; THIN-FILM TRANSISTOR;

CRYSTAL ORIENTATION;

EID: 54249108943     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1880     Document Type: Article

References (7)

1. V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda, W. Metselaar, and K. Beenakker: IEEE Trans. Electron Devices 52 (2005) 2622.
2. R. Ishihara, P. C. van der Wilt, B. D. van Dijk, A. Burtsev, J. W. Metselaar, and C. I. M. Beenakker: Thin Solid Films 427 (2003) 77.
3. T. Sato, Y. Takeishi, H. Hara, and Y. Okamoto: Phys. Rev. B 4 (1970) 1950.
4. N. Higashi, G. Nakagawa, and T. Asano: AMFPD, 2005, TFT1-3, p. 289.
5. N. Higashi, G. Nakagawa, and T. Asano; Jpn. J. Appl. Phys. 45 (2006) 4347.
6. C. Hazelden and J. L. Batsone: J. Appl. Phys. 73 (1993) 8279.
7. H. Ming, R. Ishihara, and Y. Hiroshima: Tech. Dig. IDW, 2005, p. 1213.