Different shape of GaAs quantum structures under various growth conditions

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6500-6504

  Kim, Jaesu ^a   Jo, Byounggu ^a   Lee, Kwang Jae ^a   Park, Dongwoo ^a   Lee, Cheul Ro ^a   Kim, Jin Soo ^a   Jeong, Mun Seok ^b   Byeon, Clare Chisu ^b   Kang, Hoonsoo ^b   Kim, Jong Su ^c   Song, Jin Dong ^d   Choi, Won Jun ^d   Lee, Jung Il ^d   Lee, Sang Jun ^e   Noh, Sam Kyu ^e   Oh, Dae Kon ^f   Leem, Jae Young ^g  

^a Chonbuk National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Yeungnam University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

^e Korea Research Institute of Standards and Science   (South Korea)

^f Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^g Inje University   (South Korea)

Author keywords

Growth conditions; Quantum dot; Quantum ring

Indexed keywords

ALGAAS/GAAS; DROPLET EPITAXY; FORMATION CHARACTERISTICS; GAAS; GAAS(001); GROWTH CONDITIONS; GROWTH PARAMETERS; QUANTUM DOT; QUANTUM DOTS; QUANTUM RING; QUANTUM STRUCTURE;

ARSENIC; DROP FORMATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; NANORINGS; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM;

EID: 77956057948     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.151     Document Type: Conference Paper

References (18)

1. F. Grillot, C.-Y. Lin, N.A. Naderi, M. Pochet, and L.F. Lester Appl. Phys. Lett. 94 2009 153503
2. A. Imre, G. Csaba, L. Ji, A. Orlov, G.H. Bernstein, and W. Porod Science 311 2006 205
3. Z. Yuan, B.E. Kardynal, R.M. Stevenson, A.J. Shields, C.J. Lobo, K. Cooper, N.S. Beattie, D.A. Ritchie, and M. Pepper Science 295 2002 102
4. Zh.M. Wang, C. Rodriguez, Sh. Seydmohamadi, Yu.I. Mazur, Y.Z. Xie, and G.J. Salamo Appl. Phys. Lett. 94 2009 083107
5. J.F. Chen, C.H. Chiang, Y.H. Wu, L. Chang, and J.Y. Chi J. Appl. Phys. 104 1994 023509
6. J.S. Kim, J.H. Lee, S.U. Hong, W.S. Han, H.-S. Kwack, C.W. Lee, and D.K. Oh IEEE Photonics Technol. Lett. 16 2004 1607
7. J.S. Kim, and N. Koguchi Appl. Phys. Lett. 85 2004 5893
8. C.K. Lee, C. Park, H.J. Lee, S.K. Noh, K.S. Lee, and S.J. Park Appl. Phys. Lett. 73 1998 2615
9. Jong S. Kim, M.S. Jeong, C.C. Byeon, D.-K. Ki, J. Lee, Jin S. Kim, I.-S. Kim, and N. Koguchi Appl. Phys. Lett. 88 2006 241911
10. T. Mano, and N. Koguchi J. Cryst. Growth 278 2005 108
11. T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai, T. Tateno, J.S. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, and N. Koguchi Nano Lett. 5 2005 425
12. S.S. Huang, Z.C. Niu, Z.D. Fang, H.Q. Ni, Z. Gong, and J.B. Xia Appl. Phys. Lett. 89 2006 031921
13. C.D. Lee, C.R. Park, H.J. Lee, S.J. Park, K.S. Lee, C.G. Park, and S.K. Noh J. Surf. Anal. 4 1998 299
14. A. Ohtake, J. Nakamura, S. Tsukamoto, N. Koguchi, and A. Natori Phys. Rev. Lett. 89 2002 206102
15. I.T. Ito, K. Tsutsumida, K. Nakamura, Y. Kangawa, K. Shiraishi, A. Taguchi, and H. Kageshima Appl. Surf. Sci. 237 2004 194
16. J.S. Kim, J.H. Lee, S.U. Hong, W.S. Han, H.-S. Kwack, J.H. Kim, and D.K. Oh J. Appl. Phys. 94 2003 2486
17. M. Missous J. Appl. Phys. 78 1995 4467
18. M. Kaminska, Z. Liliental-Weber, E.R. Weber, T. George, and J.B. Kortright Appl. Phys. Lett. 54 1990 1881