Lateral alignment of InGaAs quantum dots as function of spacer thickness

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Wang, Zh M ^a   Rodriguez, C ^a   Seydmohamadi, Sh ^a   Mazur, Yu I ^a   Xie, Y Z ^a   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE DIFFUSION; TWO DIMENSIONAL;

DOT DENSITIES; ELASTIC ANISOTROPIES; GAAS; GAAS(1 0 0); GROWTH MECHANISMS; INGAAS QUANTUM DOTS; LATERAL ALIGNMENTS; LATERAL ORDERINGS; MATRIXES; ONE-DIMENSIONAL; SPACER LAYERS; SPACER THICKNESS;

GALLIUM ALLOYS;

EID: 61349126065     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089695     Document Type: Article

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