GaAs quantum dots with a high density on a GaAs (111) A substrate

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Kim, Jong Su ^a   Jeong, Mun Seok ^a   Byeon, Clare C ^a   Ko, Do Kyeong ^a   Lee, Jongmin ^a   Kim, Jin Soo ^b   Kim, In Soo ^c   Koguchi, Nobuyuki ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Kyungwoon University   (South Korea)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

GAAS QUANTUM DOTS (QDS); HIGH CRYSTAL QUALITY; LINEWIDTH; SURFACE MIGRATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745218526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213012     Document Type: Article

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