High doping effects on in-situ Ohmic contacts to n-InAs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 481-484

  Baraskar, Ashish ^a   Jain, Vibhor ^a   Wistey, Mark A ^c   Singisetti, Uttam ^a   Lee, Yong Ju ^d   Thibeault, Brian ^a   Gossard, Arthur ^a,b   Rodwell, Mark J W ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of Notre Dame   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; DOPING EFFECTS; IN-SITU; INAS; SPECIFIC CONTACT RESISTIVITY; THROUGH TRANSMISSION;

ELECTRIC CONTACTORS; ELECTRON MOBILITY; INDIUM PHOSPHIDE; MOLYBDENUM; OHMIC CONTACTS; SEMICONDUCTING INDIUM;

CARRIER CONCENTRATION;

EID: 77955933687     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516269     Document Type: Conference Paper

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