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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 504-507

Mobility enhancement in indium-rich N-channel InxGa 1-xAs HEMTs by application of 〈110〉 uniaxial strain

(2) Xia, Ling a Del Alamo, Jesús A a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EFFECTIVE MASS; INALAS/INGAAS; INAS; MECHANICAL STRAIN; MOBILITY ENHANCEMENT; N-CHANNEL; SI CMOS; STRAIN ENGINEERING; UNI-AXIAL STRAINS;

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM PHOSPHIDE; MESFET DEVICES; SEMICONDUCTING INDIUM; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 77955932596 PISSN: 10928669 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ICIPRM.2010.5516249 Document Type: Conference Paper

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.