Graphene growth on silicon carbide

NTT Technical Review

Volumn 8, Issue 8, 2010, Pages

  Hibino, Hiroki ^a   Kageshima, Hiroyuki ^b   Nagase, Masao ^b  

^a Bio Medical Informatics Research Center   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE GROWTH; STRUCTURAL AND PHYSICAL PROPERTIES; THERMAL DECOMPOSITIONS;

PYROLYSIS; SILICON CARBIDE;

GRAPHENE;

EID: 77955896361     PISSN: 13483447     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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2. H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, "Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces," Appl. Phys. Exp., Vol.2, p. 065502, 2009.
3. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, "Microscopic Thickness Determination of Thin Graphite Films Formed on SiC from Quantized Oscillation in Reflectivity of Low-energy Electrons," Phys. Rev. B, Vol.77, p. 075413, 2008.
4. H. Kageshima, H. Hibino, and M. Nagase, "Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles," Mater. Sci. Forum, Vols. 645-648, pp. 597-602, 2010.
5. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "In-plane Conductance Measurement of Graphene Nanoislands Using an Integrated Nanogap Probe," Nanotechnology, Vol.19, No.49, p. 495701, 2008.
6. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Local Conductance Measurements of Double-layer Graphene on SiC Substrate," Nanotechnology, Vol.20, No.44, p. 445704, 2009.
7. K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller, "Towards Wafer-size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide," Nature Mater., Vol.8, pp. 203-207, 2009.