One-step photoembossing for submicrometer surface relief structures in liquid crystal semiconductors

ACS Nano

Volumn 4, Issue 6, 2010, Pages 3248-3253

  Liedtke, Alicia ^a   Lei, Chunhong ^a   O'Neill, Mary ^a   Dyer, Peter E ^a   Kitney, Stuart P ^a   Kelly, Stephen M ^a  

^a UNIVERSITY OF HULL   (United Kingdom)

Author keywords

Liquid crystals; Molecular electronics; Nanoimprinting; Organic photovoltaics; Photolithography; Photonics; Self assembly

Indexed keywords

CRYSTAL SEMICONDUCTORS; GRATING FORMATION; HIGH-THROUGHPUT; LIQUID-CRYSTALLINE; NANO-IMPRINTING; NANOMETER-SCALE STRUCTURES; ORGANIC PHOTOVOLTAICS; ORGANIC SEMICONDUCTOR; PHASE MASKS; PHOTOEMBOSSING; PHOTOVOLTAIC DEVICES; POST ANNEALING; SEMICONDUCTING THIN FILMS; SINGLE-STEP METHOD; STRUCTURED FILMS; SUBMICROMETERS; SURFACE RELIEF GRATINGS; SURFACE RELIEF STRUCTURES;

CRYSTALS; MOLECULAR ELECTRONICS; PHOTOLITHOGRAPHY; PHOTOVOLTAIC EFFECTS; SELF ASSEMBLY; WET ETCHING;

LIQUID CRYSTALS;

NANOMATERIAL;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIQUID CRYSTAL; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIQUID CRYSTALS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 77955855683     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100012g     Document Type: Article

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