Transport properties and microstructures of polycrystalline In 2O3-ZnO thin films

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Makise, K ^a   Mitsuishi, K ^a   Kokubo, N ^b   Yamaguchi, T ^b   Shinozaki, B ^b   Yano, K ^c   Inoue, K ^c   Nakamura, H ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c IDEMITSU KOSAN CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; CARRIER DENSITY; CARRIER ELECTRONS; CONDUCTING PATHS; EELS SPECTRA; ELECTRIC RESISTIVITY; ELECTRON MEAN FREE PATH; FILM STRUCTURE; GLASS SUBSTRATES; GRAIN SIZE; POLYCRYSTALLINE; POST ANNEALING; PROPERTIES AND MICROSTRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SCATTERING CENTERS; STEM-EELS; TRANSITION TEMPERATURE; ZNO; ZNO FILMS; ZNO THIN FILM;

AMORPHOUS FILMS; ANNEALING; DROP FORMATION; ELECTRIC CONDUCTIVITY; ELECTRIC LOSSES; ELECTRONS; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; INDIUM; METALLIC FILMS; PHASE INTERFACES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77955840025     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452375     Document Type: Article

References (25)

1. K. Nomura, H. Ohata, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 432, 488 (2004). 10.1038/nature03090
2. H. Han, J. W. Mayer, and T. L. Alford, J. Appl. Phys. JAPIAU 0021-8979 100, 083715 (2006). 10.1063/1.2357647
3. Y. Shigesato, D. C. Paine, and T. E. Haynes, J. Appl. Phys. JAPIAU 0021-8979 73, 3805 (1993). 10.1063/1.352887
4. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, Thin Solid Films THSFAP 0040-6090 445, 63 (2003). 10.1016/j.tsf.2003.09.014
5. J. M. Phillips, R. J. Cava, G. A. Thoms, S. A. Carter, J. Kwo, T. Sirgirst, J. J. Krajewski, J. H. Marshall, W. F. Peck, and D. H. Rapkine, Appl. Phys. Lett. APPLAB 0003-6951 67, 2246 (1995). 10.1063/1.115118
6. M. Funaki, K. Makise, B. Shinozaki, K. Yano, F. Utsuno, K. Inoue, and H. Nakamura, J. Appl. Phys. JAPIAU 0021-8979 103, 113701 (2008). 10.1063/1.2936316
7. N. Ito, Y. Sato, P. K. Song, A. Kaijo, K. Inoue, and Y. Shigesato, Thin Solid Films THSFAP 0040-6090 496, 99 (2006). 10.1016/j.tsf.2005.08.257
8. D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, Thin Solid Films THSFAP 0040-6090 516, 5894 (2008). 10.1016/j.tsf.2007.10.081
9. J. R. Bellingham, W. A. Phillips, and C. J. Adkins, J. Phys.: Condens. Matter JCOMEL 0953-8984 2, 6207 (1990). 10.1088/0953-8984/2/28/011
10. H. Nakazawa, Y. Ito, E. Matsumoto, K. Adachi, N. Aoki, and Y. Ochiai, J. Appl. Phys. JAPIAU 0021-8979 100, 093706 (2006). 10.1063/1.2358829
11. K. A. Mkhoyan, T. Babinec, S. E. Maccagnano, E. J. Kirkland, and J. Silcox, Ultramicroscopy ULTRD6 0304-3991 107, 345 (2007). 10.1016/j.ultramic. 2006.09.003
12. P. Harkins, M. MacKenzie, A. J. Crave, and D. W. MacComb, Micron MCONEN 0968-4328 39, 709 (2008). 10.1016/j.micron.2007.10.016
13. H. Morikawa, H. Kurata, and M. Fujita, J. Electron Microsc. JELJA7 0022-0744 49, 67 (2000).
14. G. Guenther, G. Schierning, R. Theissmann, R. Kruk, R. Scmechel, C. Baehtz, and A. Prodi-Schweb, J. Appl. Phys. JAPIAU 0021-8979 104, 034501 (2008). 10.1063/1.2958323
15. B. Shinozaki, K. Makise, Y. Shimane, H. Nakamura, and K. Inoue, J. Phys. Soc. Jpn. JUPSAU 0031-9015 76, 074718 (2007). 10.1143/JPSJ.76.074718
16. N. Tanaka, Sci. Technol. Adv. Mater. STAMCV 1468-6996 9, 014111 (2008). 10.1088/1468-6996/9/1/014111
17. K. Furuya, Sci. Technol. Adv. Mater. STAMCV 1468-6996 9, 014110 (2008). 10.1088/1468-6996/9/1/014110
18. R. Martins, P. Barquinha, A. Pimentel, L. Pereira, and E. Fortunato, Phys. Status Solidi A PSSABA 0031-8965 202, R95 (2005). 10.1002/pssa.200521020
19. Y. Shigesato and D. C. Paines, Appl. Phys. Lett. APPLAB 0003-6951 62, 1268 (1993). 10.1063/1.108703
20. T. Minami, K. Ohashi, T. Tomifuji, and S. Takada, J. Cryst. Growth JCRGAE 0022-0248 117, 370 (1992). 10.1016/0022-0248(92)90778-H
21. E. Shanthi, V. Dulta, A. Banerjee, and K. L. Chopra, J. Appl. Phys. JAPIAU 0021-8979 51, 6243 (1980). 10.1063/1.327610
22. T. Inushima, Sci. Technol. Adv. Mater. STAMCV 1468-6996 7, S112 (2006). 10.1016/j.stam.2006.05.009
23. H. Shuman and A. P. Somlyo, Ultramicroscopy ULTRD6 0304-3991 21, 23 (1987). 10.1016/0304-3991(87)90004-0
24. R. D. Leapman and E. R. Swyt, Ultramicroscopy ULTRD6 0304-3991 26, 393 (1988). 10.1016/0304-3991(88)90239-2
25. T. Omata, H. Fujiwara, S. Otsuka-Yao-Matsuo, and N. Ono, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 37, 868 (1998). 10.1143/JJAP.37.868