Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GaInN/GaN light-emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Passow, Thorsten ^a   Maier, Markus ^a   Kunzer, Michael ^a   Leancu, Crenguta Columbina ^a   Liu, Shangjing ^a   Wiegert, Joachim ^a   Schmidt, Ralf ^a   Köhler, Klaus ^a   Wagner, Joachim ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; ELECTROLUMINESCENCE PROPERTIES; GAN SUBSTRATE; GAN TEMPLATE; HETEROSTRUCTURES; LOW DEFECT DENSITIES; LOW-DISLOCATION DENSITY; OVERALL EFFICIENCY; QUANTUM WELL; RADIATIVE EFFICIENCY; SINGLE QUANTUM WELL; WELL WIDTH;

DEFECT DENSITY; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

QUANTUM EFFICIENCY;

EID: 77955821965     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880789     Document Type: Article

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