Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2133-2135

  Maier, M ^a   Kohler K ^a   Kunzer, M ^a   Wiegert, J ^a   Liu, S ^a   Kaufmann, U ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT SUBSTRATES; FREESTANDING GAN; FREESTANDING GAN SUBSTRATES; GAN TEMPLATE; INJECTION CURRENTS; LED EFFICIENCIES; LED STRUCTURE; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; LOW DEFECT DENSITIES; LOW TEMPERATURE NUCLEATION; ON-WAFER; OUTPUT POWER; SAPPHIRE SUBSTRATES; SURFACE-TEXTURING; WAVELENGTH RANGES;

DEFECT DENSITY; ELECTROLUMINESCENCE; EXTRACTION; GALLIUM NITRIDE; LIGHT; SAPPHIRE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 59349090942     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778475     Document Type: Conference Paper

References (7)

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