Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Shin, H J ^a   Kang, Youn Seon ^b   Benayad, Anass ^b   Kim, Ki Hong ^b   Lee, Y M ^a   Jung, M C ^a   Lee, Tae Yon ^b   Suh, Dong Seok ^b   Kim, Kijoon H P ^b   Kim, Cheolkyu ^b   Khang, Yoonho ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; INDIUM ALLOYS; METALLIC COMPOUNDS; THICK FILMS;

CHEMICAL STATES; CO-SPUTTERING; FCC STRUCTURES; GE-SB-TE; PHASE CHANGES;

GERMANIUM;

EID: 47549097543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959730     Document Type: Article

References (18)

1. K. Kim, J. -C. Park, J. -G. Chung, S. A. Song, M. -C. Jung, Y. M. Lee, H. -J. Shin, B. Kuh, Y. Ha, and J. -S. Noh, Appl. Phys. Lett. 0003-6951 10.1063/1.2408660 89, 243520 (2006).
2. M. C. Jung, Y. M. Lee, H. -D. Kim, M. G. Kim, H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, Appl. Phys. Lett. 0003-6951 10.1063/1.2773959 91, 083514 (2007).
3. H. L. Ma, Y. Guimond, X. H. Zhang, and J. Lucas, J. Non-Cryst. Solids 256-257, 165 (1999).
4. S. Murugavel and S. Asokan, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58. 3022 58, 3022 (1998).
5. K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, and M. Wuttig, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-005-3232-2 80, 1611 (2005).
6. Y. Maeda, H. Andoh, I. Ikuta, and H. Minemura, J. Appl. Phys. 0021-8979 10.1063/1.342502 64, 1715 (1988).
7. L. van Pieterson, M. H. R. Lankhorst, M. van Schijindel, A. E. Kuiper, and J. H. J. Roosen, J. Appl. Phys. 0021-8979 10.1063/1.1868860 97, 083520 (2005).
8. L. Men, F. Jiang, and F. Gan, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(97)02042-4 47, 18 (1997).
9. J. Feng, Y. Zhang, B. W. Qiao, Y. F. Lai, Y. Y. Lin, B. C. Cai, T. A. Tang, and B. Chen, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-006-3851-2 87, 57 (2007).
10. M. Dongol, M. M. Hafiz, M. Abou-Zied, and A. F. Elhady, Appl. Surf. Sci. 0169-4332 10.1016/S0169-4332(01)00394-4 185, 1 (2001).
11. M. A. Abdel-Rahim, Physica B 239, 238 (1997).
12. ICSD Database, Version 2005-1.
13. B. Legendre, B. Gather, and R. Blachnik, Z. Metallkd. 71, 588 (1980).
14. M. K. Lee and H. J. Shin, Rev. Sci. Instrum. 0034-6748 10.1063/1.1370563 72, 2605 (2001).
15. M. -C. Jung, H. J. Shin, K. Kim, J. S. Noh, and J. Chung, Appl. Phys. Lett. 0003-6951 10.1063/1.2236216 89, 043503 (2006).
16. Each peak was deconvoluted with a single Gaussian distribution. When we used the Voigt profile, the peak position and the trend of the linewidth changes were the same. The energy separation of the spin-orbit split in the Ge 3 d5/2-3/2, Sb 4 d5/2-3/2, Te 4 d5/2-3/2, and In 4 d5/2-3/2 orbitals was 0.6, 1.25, 1.5, and 0.65 eV, respectively.
17. J. J. Kim, K. Kobayashi, E. Ikenaga, M. Kobata, S. Ueda, T. Matsunage, K. Kifune, R. Kojima, and N. Yamada, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76. 115124 76, 115124 (2007).
18. F. A. Cotton, G. Wilkins, and P. L. Gans, Basic Inorganic Chemistry, 2nd ed. (Wiley, New York, 1987).