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Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

Effect of polarization-memory in SrTiO3/La0.9Sr 0.1MnO3 multilayer on Si substrate

(3) Zhang, Yingtang a,b Zhang, Yiming a Li, Shengtao b

a SHAANXI UNIVERSITY OF TECHNOLOGY (China)

b XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE DESIGN; HYSTERESIS BEHAVIOR; INTERFACIAL POLARIZATION; LASER MOLECULAR BEAM EPITAXY; MEMORY EFFECTS; RANDOM ACCESS MEMORIES; RECTIFYING BEHAVIORS; SI (100) SUBSTRATE; SI SUBSTRATES; SRTIO; TRAPPING/DETRAPPING;

COMPUTER CONTROL SYSTEMS; DISTILLATION; EPITAXIAL GROWTH; HYSTERESIS; MANGANESE OXIDE; POLARIZATION; RANDOM ACCESS STORAGE; STRONTIUM ALLOYS;

MULTILAYERS;

EID: 77955757938 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3476358 Document Type: Article

Times cited : (2)

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