Design of Doherty power amplifiers for handset applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 8, 2010, Pages 2134-2142

  Kang, Daehyun ^a   Choi, Jinsung ^b   Kim, Dongsu ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Doherty; efficient; handset; heterojunction bipolar transistors (HBTs); linear; monolithic microwave integrated circuit (MMIC); power amplifier (PA)

Indexed keywords

CREST FACTORS; DOHERTY; DOHERTY POWER AMPLIFIER; EFFICIENT; ERROR VECTOR MAGNITUDE; HANDSET; IEEE 802.16E; INGAP/GAAS; LINEAR; LUMPED COMPONENTS; M-WIMAX; OUTPUT IMPEDANCE; OUTPUT MATCHING; OUTPUT POWER; PHASE COMPENSATION; POWER DRIVES; POWER-ADDED EFFICIENCY;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; DOHERTY AMPLIFIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; TELEPHONE SETS; WIMAX;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 77955716092     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2053074     Document Type: Article

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