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Volumn 51, Issue 3, 2003, Pages 986-993

A fully matched N-way Doherty amplifier with optimized linearity

Author keywords

Adjacent channel leakage ratio (ACLR); Efficiency; Linearity; Microwave Doherty amplifier; Power amplifiers; WCDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; EFFICIENCY; ELECTRIC IMPEDANCE; INTERMODULATION; LEAKAGE CURRENTS; MOSFET DEVICES; POWER AMPLIFIERS; SIGNAL DISTORTION;

EID: 0037358455     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.808713     Document Type: Article
Times cited : (201)

References (12)
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  • 4
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    • IEEE MTT-S Int. Microwave Symp. Dig., 2000 , pp. 537-540
    • McCarroll, C.P.1    Alley, G.D.2    Yates, S.3    Matreci, R.4
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    • Campbell, C.F.1
  • 7
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    • Dec.
    • Y. Yang, J. Yi, Y. Y. Woo, and B. Kim, "Optimum design for linearity and efficiency of microwave Doherty amplifier using a new load matching technique," Microwave J., vol. 44, no. 12, pp. 20-36, Dec. 2001.
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    • Yang, Y.1    Yi, J.2    Woo, Y.Y.3    Kim, B.4
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    • Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
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    • J. C. Pedro and J. Perez, "Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model," IEEE Microwave Theory Tech., vol. 42, pp. 25-33, Jan. 1994.
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    • Pedro, J.C.1    Perez, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.