Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

Applied Surface Science

Volumn 256, Issue 22, 2010, Pages 6748-6752

  Pattammal, M ^a   Peter, A John ^b  

^a MADURAI KAMARAJ UNIVERSITY   (India)

^b Govt Arts and Science College   (India)

Author keywords

Electronic states; Hydrogenic donor impurity; Semiconductor nano structures

Indexed keywords

BINDING ENERGY; ELECTRONIC STATES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOSTRUCTURES; WAVE FUNCTIONS; WIDE BAND GAP SEMICONDUCTORS; ZINC; ZINC SULFIDE;

EFFECTIVE MASS APPROXIMATION; HYDROGENIC DONOR IMPURITY; HYDROGENIC IMPURITIES; LOW-LYING EXCITED STATE; TRIAL WAVEFUNCTION; VARIATIONAL APPROACHES; VARIATIONAL PARAMETERS; VARIATIONAL SOLUTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955664677     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.04.084     Document Type: Article

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