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Volumn 28, Issue 3, 2000, Pages 165-169
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Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONIC DENSITY OF STATES;
ELECTRONS;
GROUND STATE;
IMPURITIES;
NUMERICAL METHODS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
DONOR BINDING ENERGY;
NONPARABOLICITY EFFECT;
STRONG CONFINEMENT;
WAVEFUNCTION ELONGATION;
BINDING ENERGY;
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EID: 0034272474
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1006/spmi.2000.0899 Document Type: Article |
Times cited : (7)
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References (12)
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