SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 54, Issue 11, 2010, Pages 1485-1487

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

(6) Wang, M C a Tsao, S W b Chang, T C b Lin, Y P b Liu, Po Tsun c Chen, J R d

a INSTITUTE OF NUCLEAR ENERGY RESEARCH (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

A Si:H TFTs; Mechanical strain; Photo leakage current

Indexed keywords

A-SI:H; ACTIVITY ENERGY; AMORPHOUS SILICON THIN FILM TRANSISTORS; BENDING STRAIN; DENSITY OF STATE; MECHANICAL BENDING; MECHANICAL STRAIN; PHOTO-LEAKAGE CURRENT; RECOMBINATION CENTERS;

AMORPHOUS FILMS; EXTRACTION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 77955662418 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2010.04.006 Document Type: Article

Times cited : (2)

References (13)

1
- 77955659645
- Baeuerle R, Baumbach J, Lueder E, Siegordner J. SID'99 Dig 1999; 14-7.
- (1999) SID'99 Dig , pp. 14-17
- Baeuerle, R.¹ Baumbach, J.² Lueder, E.³ Siegordner, J.⁴

2
- 0030170499
- H. Gleskova, R. Konenkamp, S. Wagner, Q. Zhang, and D.S. Shen IEEE Electr Dev Lett 17 1996 264 266
- (1996) IEEE Electr Dev Lett , vol.17 , pp. 264-266
- Gleskova, H.¹ Konenkamp, R.² Wagner, S.³ Zhang, Q.⁴ Shen, D.S.⁵

3
- 17644449312
- J.K. Yoon, Y.H. Jang, B.K. Kim, H.S. Choi, B.C. Ahn, and C. Lee J Non-Cryst Solids 164-166 1993 747 750
- (1993) J Non-Cryst Solids , vol.164-166 , pp. 747-750
- Yoon, J.K.¹ Jang, Y.H.² Kim, B.K.³ Choi, H.S.⁴ Ahn, B.C.⁵ Lee, C.⁶

4
- 0000845613
- S. Minomura, and H.G. Drickamer J Phys Chem Solids 23 1962 451 456
- (1962) J Phys Chem Solids , vol.23 , pp. 451-456
- Minomura, S.¹ Drickamer, H.G.²

5
- 0022808247
- W.E. Spear, and M. Heintze Philos Mag B 54 1986 343 358
- (1986) Philos Mag B , vol.54 , pp. 343-358
- Spear, W.E.¹ Heintze, M.²

6
- 21044450378
- E. Menard, R.G. Nuzzo, and J.A. Rogers Appl Phys Lett 86 9 2005 093507
- (2005) Appl Phys Lett , vol.86 , Issue.9 , pp. 093507
- Menard, E.¹ Nuzzo, R.G.² Rogers, J.A.³

7
- 17644384476
- Z.T. Zhu, E. Menard, K. Hurley, R.G. Nuzzo, and J.A. Rogers Appl Phys Lett 86 13 2005 133507
- (2005) Appl Phys Lett , vol.86 , Issue.13 , pp. 133507
- Zhu, Z.T.¹ Menard, E.² Hurley, K.³ Nuzzo, R.G.⁴ Rogers, J.A.⁵

8
- 1842425486
- S.H. Won, J.K. Chung, C.B. Lee, H.C. Nam, J.H. Hur, and J. Jang J Electrochem Soc 151 3 2004 G167 G170
- (2004) J Electrochem Soc , vol.151 , Issue.3
- Won, S.H.¹ Chung, J.K.² Lee, C.B.³ Nam, H.C.⁴ Hur, J.H.⁵ Jang, J.⁶

9
- 2942556919
- H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, and S. Wagner J Non-Cryst Solids 338-340 2004 732 735
- (2004) J Non-Cryst Solids , vol.338-340 , pp. 732-735
- Gleskova, H.¹ Hsu, P.I.² Xi, Z.³ Sturm, J.C.⁴ Suo, Z.⁵ Wagner, S.⁶

10
- 33846633750
- M.C. Wang, T.C. Chang, P.T. Liu, S.W. Tsao, and J.R. Chen Electrochem Solid-State Lett 10 2007 J49 J51
- (2007) Electrochem Solid-State Lett , vol.10
- Wang, M.C.¹ Chang, T.C.² Liu, P.T.³ Tsao, S.W.⁴ Chen, J.R.⁵

11
- 3342928282
- W.E. Spear J Non-Cryst Solids 59-60 1983 1 13
- (1983) J Non-Cryst Solids , vol.5960 , pp. 1-13
- Spear, W.E.¹

12
- 0011421354
- R.E.I. Schropp, J. Snijder, and J.F. Verwey J Appl Phys 60 1986 643 649
- (1986) J Appl Phys , vol.60 , pp. 643-649
- Schropp, R.E.I.¹ Snijder, J.² Verwey, J.F.³

13
- 84897690897
- T. Globus, H.C. Slade, M.S. Shur, and M. Hack Mat Res Soc Proc 336 1994 823
- (1994) Mat Res Soc Proc , vol.336 , pp. 823
- Globus, T.¹ Slade, H.C.² Shur, M.S.³ Hack, M.⁴

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