Heteroepitaxial silicon film growth at 600 °c from an Al-Si eutectic melt

Thin Solid Films

Volumn 518, Issue 19, 2010, Pages 5368-5371

  Chaudhari, P ^a   Shim, Heejae ^a   Wacaser, Brent A ^b   Reuter, Mark C ^b   Murray, Conal ^b   Reuter, Kathleen B ^b   Jordan Sweet, Jean ^b   Ross, Frances M ^b   Guha, Supratik ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Nanowires; Silicon

Indexed keywords

AL-SI EUTECTIC; CRYSTAL QUALITIES; HETEROEPITAXIAL; PHOTOVOLTAIC APPLICATIONS; SI FILMS; SI NANOWIRE; SILICON FILMS; SUBSTRATE TEMPERATURE;

ALUMINUM; NANOWIRES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FILM GROWTH;

EID: 77955660751     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.034     Document Type: Article

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