Effect of grain alignment on lateral carrier transport in aligned-crystalline silicon films on polycrystalline substrates

Journal of Materials Research

Volumn 22, Issue 4, 2007, Pages 821-825

  Choi, Woong ^a,b   Findikoglu, Alp T ^a   Romero, Manuel J ^c   Al Jassim, Mowafak ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b APPLIED MATERIALS INC   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; ENERGY BARRIERS; GRAIN BOUNDARIES; HALL MOBILITY; PASSIVATION;

ALIGNED-CRYSTALLINE SILICON (ACSI) FILMS; GRAIN ALIGNMENT;

POLYSILICON;

EID: 34247335803     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0105     Document Type: Article

References (12)

1. S.D. Brotherton: Polycrystalline silicon thin film transistors. Semicond. Sci. Technol. 10, 721 (1995).
2. A. Shah, P. Torres, R. Tscharner, N. Wyrsch, and H. Keppner: Photovoltaic technology: The case for thin-film solar cells. Science 285, 692 (1999).
3. J.Y.W. Seto: Electrical properties of polycrystalline silicon films. J. Appl. Phys. 46, 5247 (1975).
4. A.T. Findikoglu, W. Choi, V. Matias, T.G. Holesinger, Q.X. Jia, and D.E. Peterson: Well-oriented silicon thin films with high carrier mobility on polycrystalline substrates. Adv. Mater. 17, 1527 (2005).
5. W. Choi, V. Matias, J.K. Lee, and A.T. Findikoglu: Dependence of carrier mobility on grain mosaic spread in <001>-oriented Si films grown on polycrystalline substrates. Appl. Phys. Lett. 87, 152104 (2005).
6. K. Christmann, G. Ertl, and T. Pignet: Adsorption of hydrogen on a Pt (111) surface. Surf Sci. 54, 365 (1976).
7. T. Kamins: Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer, Boston, 1998).
8. 2 investigated by electro-assisted scanning tunneling microscopy. Appl. Phys. Lett. 87, 172106 (2005).
9. J. Levinson, F.R. Shepherd, P.J. Scanlon, W.D. Westwood, G. Este, and M. Rider: Conductivity behavior in polycrystalline semiconductor thin film transistors. J. Appl. Phys. 53, 1193 (1982).
10. L.L. Kazmerski, W.B. Berry, and C.W. Allen: Role of defects in determining the electrical properties of CdS thin films. I. Grain boundaries and surfaces. J. Appl. Phys. 43, 3515 (1972).
11. C.H. Seager: Grain boundaries in polycrystalline silicon. Ann. Rev. Mater. Sci. 15, 271 (1985).
12. N.D. Arora, J.R. Hauser, and D.J. Roulston: Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE Trans. Electr. Devices ED-29, 292 (1982).