Band alignment at the BaCuSeF/ZnTe interface

Applied Physics Letters

Volumn 96, Issue 16, 2010, Pages

  Zakutayev, Andriy ^a   Tate, Janet ^a   Platt, Heather A S ^a   Keszler, Douglas A ^a   Barati, Alireza ^b   Klein, Andreas ^b   Jaegermann, Wolfram ^b  

^a OREGON STATE UNIVERSITY   (United States)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND OFFSETS; CDTE; CHEMICAL COMPOSITIONS; CONDUCTION BAND OFFSET; DOUBLE-HETEROJUNCTION; GRADED INTERFACES; IN-SITU; P TYPE SEMICONDUCTOR; PHOTOEMISSION SPECTROSCOPY; PHOTOVOLTAIC ABSORBERS; VALENCE-BAND OFFSET; WIDE BAND GAP;

CADMIUM COMPOUNDS; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; ZINC COMPOUNDS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77951777317     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3405757     Document Type: Article

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