Photoconductive and photovoltaic evaluation of In2O 3-SnO2 multilayered thin-films deposited on silicon by reactive pulsed laser ablation

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4738-4742

  Trucchi, D M ^a   Zanza, A ^a   Bellucci, A ^a   Marotta, V ^a   Orlando, S ^a  

^a CNR   (Italy)

Author keywords

Electrical transport; In and Sn oxides; Multilayers; Photoconduction; Photovoltaic properties; Reactive pulsed laser ablation

Indexed keywords

ELECTRICAL TRANSPORT; IN AND SN OXIDES; PHOTOCONDUCTION; PHOTOVOLTAIC PROPERTY; PULSED LASER ABLATION;

ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; LASER ABLATION; LASER APPLICATIONS; MULTILAYERS; OPEN CIRCUIT VOLTAGE; OXYGEN; PHOTOCONDUCTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING CIRCUITS; TIN;

PULSED LASERS;

EID: 77955611155     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.072     Document Type: Conference Paper

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