Combined ab initio and kinetic Monte Carlo simulations of C diffusion on the √3 X √3 β-SiC(111) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 7, 2005, Pages

  Righi, M C ^a   Pignedoli, C A ^a,c   Di Felice, R ^a   Bertoni, C M ^a   Catellani, A ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b IMEM CNR   (Italy)

^c IBM   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

AB INITIO CALCULATION; ARTICLE; BINDING SITE; DIFFUSION COEFFICIENT; MONTE CARLO METHOD; TEMPERATURE;

EID: 15744366887     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.075303     Document Type: Article

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