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Volumn 645-648, Issue , 2010, Pages 143-146

Growth rate effect on 3C-SiC film residual stress on (100) Si substrates

(9) Anzalone, R a,b Locke, C c Carballo, J c Piluso, N a Severino, A a D'Arrigo, G a Volinsky, A A c La Via, F a Saddow, S E c,d

a CNR (Italy)

b UNIVERSITY OF CATANIA (Italy)

c UNIVERSITY OF SOUTH FLORIDA (United States)

d UNIVERSITY OF SOUTH FLORIDA (United States)

Author keywords

3C SiC heteroepitaxy; Growth rate; Residual stress

Indexed keywords

COMPRESSIVE STRESS; EPITAXIAL GROWTH; FILM GROWTH; NEMS; QUALITY CONTROL; RESIDUAL STRESSES; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION;

3C-SIC HETEROEPITAXY; CANDIDATE MATERIALS; CRYSTAL QUALITIES; CURVATURE MEASUREMENT; HYDROGEN CARRIER GAS; NANO ELECTROMECHANICAL SYSTEMS; STONEY'S EQUATION; TWO-STEP GROWTH;

GROWTH RATE;

EID: 77955460356 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.143 Document Type: Conference Paper

Times cited : (24)

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