Residual stress in CVD-grown 3C-SiC films on Si substrates

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 109-114

  Volinsky, Alex A ^a   Kravchenko, Grygoriy ^a   Waters, Patrick ^a   Reddy, Jayadeep Deva ^a   Locke, Chris ^a   Frewin, Christopher ^a   Saddow, Stephen E ^a  

^a University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE MISMATCH; RESIDUAL STRESSES; SILICON WAFERS; SUBSTRATES; THERMAL EXPANSION;

FEATURE RELEASE; GROWTH DIRECTIONS; LINEAR PROFILES; SINGLE-CRYSTALLINE FILM; STONEY'S FORMULA; SUBSTRATE CURVATURE; TARGET MATERIALS; TENSILE RESIDUAL STRESS;

SILICON CARBIDE;

EID: 55849141269     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d03-05     Document Type: Conference Paper

References (10)

1. K.M. Jackson, J. Dunning, C.A. Zorman, M. Meheregany, W.N. Sharpe, Journal of Microelectromechanical Systems 14 (4), August (2005).
2. W. Kern and D.A. Puotinen, RCA Rev. 31 187-206 (1970).
3. M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow, Mat. Res. Soc. Symp. Proc. 911, 79 (2006).
4. R.F. Davis, G. Kelner, M. Shur, J.W. Palmour and J. Edmond, Proc. IEEE 79 677 (1991).
5. R.L. Myers, Y. Shishkin, O. Kordina, and S.E. Saddow, Journal of Crystal Growth 285 (4) 483-486 (2005).
6. J. Deva Reddy, A.A. Volinsky, C. Frewin, C. Locke, S.E. Saddow, Mat. Res. Soc. Symp. Proc. 1049 AA3.6 (2008).
7. G.G. Stoney, Proc. Roy. Soc. Lond. A82 72 (1909).
8. S.E. Saddow, Y. Shishkin and R.L. Myers-Ward, Chapter 3 in Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications, edited by R. M. Feenstra and C. E. C. Wood, Wiley, New York (2008).
9. H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, Mater. Sci. Forum 433-436 3-8 (2003).
10. C.L. Frewin, C. Locke, J. Wang, P. Spagnol, and S.E. Saddow, submitted to Appl. Phys. Lett., April (2008).